Thermal modeling of power semiconductor devices

Thermal modeling of single event burnout failure in semiconductor power devices

Experimental investigations of single event burnout (SEB) of power devices due to heavy ion impacts have identi®ed the conditions required to produce device failure. A key feature observed in the data is an anomalistic secondary rise in current occurring shortly after the ion strike. To verify these ®ndings including the thermally induced secondary plateau , simulations have been performed on t...

Power Semiconductor Devices

Power Semiconductor Devices

Classification, essential properties, important applications and developement of power semiconductor devices will be explained. Some common power semiconductor devices, power metal oxide semiconductor field-effect transistor (MOSFET), thyristor and some new power devices will be described and discussed.

Fundamentals of Power Semiconductor Devices

Modeling Semiconductor Optical Devices

In this article numerical methods used to model photonic devices are presented. In particular, the governing equations describing the problem, the coupling between electrical and optical fields, and the numerical algorithms used for computing solutions are discussed. As a computational example, we present the modeling of a semi-conductor optical amplifier employed as an all-optical demultiplexer.